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Acoustic-phonon runaway and impact ionization by hot electrons in silicon dioxide

D. Arnold, E. Cartier, and D. J. DiMaria
Phys. Rev. B 45, 1477(R) – Published 15 January 1992
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Abstract

We present model calculations for high-field electron transport in silicon dioxide based on recently measured energy-dependent electron-phonon scattering rates and impact ionization rates. We find a hot-electron runaway phenomenon in SiO2, ‘‘acoustic-phonon runaway.’’ This phenomenon occurs at electric fields exceeding 7 MV/cm, when acoustic-phonon scattering can no longer stabilize the hot electrons. A fraction of the electrons are accelerated in the electric field to energies high enough to generate electron-hole pairs by impact ionization. Simulated hole currents due to high-field impact ionization in SiO2 gate oxides with thicknesses greater than 200 Å agree well with measured substrate hole currents in n-channel field-effect transistors. This suggests that these currents are due to holes generated by hot-electron impacts in the gate oxide.

  • Received 11 October 1991

DOI:https://doi.org/10.1103/PhysRevB.45.1477

©1992 American Physical Society

Authors & Affiliations

D. Arnold, E. Cartier, and D. J. DiMaria

  • IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Vol. 45, Iss. 3 — 15 January 1992

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