Abstract
Several experiments have found that Ge initially grows layer by layer on the Si(100)2×1 surface, up to a thickness of 3 atomic layers. Further growth occurs via islands. Here, model calculations show that layer-by-layer growth is stabilized for up to 3 layers because it reduces the strain energy associated with the surface dimerization.
- Received 10 January 1991
DOI:https://doi.org/10.1103/PhysRevB.43.9377
©1991 American Physical Society