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Tuning band offsets at semiconductor interfaces by intralayer deposition

Maria Peressi, Stefano Baroni, Raffaele Resta, and Alfonso Baldereschi
Phys. Rev. B 43, 7347(R) – Published 15 March 1991
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Abstract

Band offsets can be modified at semiconductor heterojunctions or created at homojunctions by depositing thin intralayers of group-IV atoms at III-V/III-V polar interfaces. We present here a theoretical study of Si and Ge intralayers deposited along (001) at GaAs and AlAs homojunctions, and at GaAs/AlAs heterojunctions. Our results show that the offset is very sensitive to the coverage and abruptness of the intralayer. A comparison with recent experiments for Si in GaAs/AlAs suggests that Si atoms are confined over two atomic planes for coverages lower than about 0.5 monolayers, whereas for higher coverages Si diffusion occurs.

  • Received 18 December 1990

DOI:https://doi.org/10.1103/PhysRevB.43.7347

©1991 American Physical Society

Authors & Affiliations

Maria Peressi, Stefano Baroni, and Raffaele Resta

  • Scuola Internazionale Superiore di Studi Avanzati (SISSA), Strada Costiera 11, I-34014 Trieste, Italy

Alfonso Baldereschi

  • Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA), PHB Ecublens, CH-1015 Lausanne, Switzerland

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Issue

Vol. 43, Iss. 9 — 15 March 1991

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