Variation of Tc and transport properties with carrier concentration in Y- and Pb-doped Bi-based superconductors

P. Mandal, A. Poddar, B. Ghosh, and P. Choudhury
Phys. Rev. B 43, 13102 – Published 1 June 1991
PDFExport Citation

Abstract

Electrical resistivity, magnetic susceptibility, and the Hall voltage of Bi2Sr2Ca1xYxCu2O8+y (Bi 2:2:1:2) and (Bi1xPbx)2Sr2Ca2Cu3O10+y (Bi 2:2:2:3) samples are measured as a function of temperature. A metal-insulator transition originating from the change of carrier concentration is found in the Bi 2:2:1:2 system at x≃0.55. Analysis of the electrical resistivity in the insulating region suggests that the transport is governed by a variable-range-hopping mechanism in the low-temperature region and phonon-assisted hopping of polarons in the high-temperature region. A universal dome-shaped Tc versus nH variation is observed in the Bi 2:2:1:2 and Bi 2:2:2:3 systems, which is similar to that reported in La2xSrxCuO4 and YBa2Cu3O7x systems. Various normal-state parameters, such as the effective mass of the carrier, Fermi energy, density of states at the Fermi level, and correlation energy, are calculated and compared to those reported in the literature.

  • Received 8 January 1991

DOI:https://doi.org/10.1103/PhysRevB.43.13102

©1991 American Physical Society

Authors & Affiliations

P. Mandal, A. Poddar, and B. Ghosh

  • Saha Institute of Nuclear Physics, 92 Acharya Prafulla Chandra Road, Calcutta 700 009, India

P. Choudhury

  • Central Glass and Ceramic Research Institute, 196 Raja Subodh Chandra Mullick Road, Calcutta 700 032, India

References (Subscription Required)

Click to Expand
Issue

Vol. 43, Iss. 16 — 1 June 1991

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×