Terahertz-frequency-resolved transient conductivity of nonthermal electrons photoexcited in GaAs

A. S. Vengurlekar and Sudhanshu S. Jha
Phys. Rev. B 43, 12454 – Published 15 May 1991
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Abstract

We calculate the terahertz-frequency dependence of the transient linear conductivity σ(t,ω) of electrons photoinjected in GaAs by a subpicosecond optical pulse. The electrons are assumed to relax to the conduction-band edge mainly by emitting longitudinal-optical phonons. We find that the occurrence of a nonthermal electron distribution, in combination with the time dependence of the mean effective momentum relaxation rate, leads to a non-Drude-like frequency response. In particular, the conductivity at large frequencies (ω/2π>1 THz) immediately after photoexcitation exceeds the corresponding conductivity after the electrons relax to the conduction-band edge. We also discuss how the Pines-Nozieres conductivity sum rule has to be modified under the nonequilibrium conditions.

  • Received 30 January 1991

DOI:https://doi.org/10.1103/PhysRevB.43.12454

©1991 American Physical Society

Authors & Affiliations

A. S. Vengurlekar and Sudhanshu S. Jha

  • Tata Institute of Fundamental Research, Bombay 400 005, India

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Vol. 43, Iss. 15 — 15 May 1991

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