Photoemission study of monoclinic BaBiO3

Z.-X. Shen, P. A. P. Lindberg, B. O. Wells, D. S. Dessau, A. Borg, I. Lindau, W. E. Spicer, W. P. Ellis, G. H. Kwei, K. C. Ott, J.-S. Kang, and J. W. Allen
Phys. Rev. B 40, 6912 – Published 1 October 1989
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Abstract

We present the results of photoemission studies of ‘‘valence-disordered’’ monoclinic BaBiO3 in the photon energy range 15120 eV. The line shapes of the valence-band photoemission spectra and the Ba contributions to the valence band are similar to the line shapes of the total density of states and Ba partial density of states, respectively. The Bi 5d core levels show only one peak for each spin-orbit component. Oxygen resonance is observed, demonstrating the existence of empty O 2p states. These results support a more covalent rather than a simple ionic picture for the electronic states of BaBiO3. Our data suggest that the charge fluctuation between the two unequal Bi sites is small. We also discuss the origin of the semiconducting character of the ‘‘valence-disordered’’ BaBiO3.

  • Received 15 May 1989

DOI:https://doi.org/10.1103/PhysRevB.40.6912

©1989 American Physical Society

Authors & Affiliations

Z.-X. Shen, P. A. P. Lindberg, B. O. Wells, D. S. Dessau, A. Borg, I. Lindau, and W. E. Spicer

  • Stanford Electronics Laboratories, Stanford University, Stanford, California 94305

W. P. Ellis, G. H. Kwei, and K. C. Ott

  • Los Alamos National Laboratory, Los Alamos, New Mexico 87545

J.-S. Kang and J. W. Allen

  • Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120

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Vol. 40, Iss. 10 — 1 October 1989

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