Abstract
Most theoretical and experimental studies of HgTe-CdTe interfaces have found a valence-band offset of ≲0.35 eV, and in many cases much lower. Here it is suggested that the available theoretical calculations can equally well be interpreted as indicating a valence-band offset of nearly 0.5 eV, which is apparently consistent with the limited experimental evidence available.
- Received 3 August 1989
DOI:https://doi.org/10.1103/PhysRevB.40.10615
©1989 American Physical Society
