High-Field Hall Factor of $n-\mathrm{Ge}$ at 200 °K

The high-field Hall factor of $n$-type germanium at 200 °K has been theoretically calculated including the effect of carrier scattering into the <100> minima and that of the magnetic field dependence of the carrier temperature and population in the different valleys. The results calculated with the optical-phonon deformation-potential constant $D_0=0.4\mathrm{}\times {10}^9$ eV ${\mathrm{cm}}^{-1\mathrm{}}$ differ widely from the experimental values. Good agreement between theory and experiment is obtained for values of $D_0$ lying within 1 × ${10}^9$ and 1.5 × ${10}^9$ eV ${\mathrm{cm}}^{-1\mathrm{}}$.