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Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

J. Clayhold, S. J. Hagen, N. P. Ong, J. M. Tarascon, and P. Barboux
Phys. Rev. B 39, 7320(R) – Published 1 April 1989
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Abstract

As x increases in Bi4Sr3Ca3xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.

  • Received 19 December 1988

DOI:https://doi.org/10.1103/PhysRevB.39.7320

©1989 American Physical Society

Authors & Affiliations

J. Clayhold, S. J. Hagen, and N. P. Ong

  • Joseph Henry Laboratories of Physics, Princeton University, Princeton, New Jersey 08544

J. M. Tarascon and P. Barboux

  • Bell Communications Research, Red Bank, New Jersey 07701

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Vol. 39, Iss. 10 — 1 April 1989

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