Abstract
We have measured the soft-x-ray–emission ,3 spectra of c-Si and a-Si:H and removed the shakeup and bremsstrahlung contributions using the method of Livins and Schnatterly [Phys. Rev. B 37, 6731 (1988); 37, 6742 (1988)]. We have obtained an estimate of the real part of the self-energy describing the effect of the random potential which characterizes a-Si:H on the c-Si transition density of states (TDOS), using an approach based on Dyson’s equation. This approach also yields the TDOS of c-Si and a-Si:H outright. In addition, we resolve the spectra into and components using an iterative procedure and remove an estimate of the intrinsic broadening effects, and thereby obtain a second determination of the TDOS. These results and those obtained through the procedure based on Dyson’s equation agree. The TDOS obtained for c-Si compares well with calculations.
- Received 12 January 1989
DOI:https://doi.org/10.1103/PhysRevB.39.12649
©1989 American Physical Society