Quantum-size effects of interacting electrons and holes in semiconductor microcrystals with spherical shape

Yosuke Kayanuma
Phys. Rev. B 38, 9797 – Published 15 November 1988
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Abstract

Quantum-size effects of an electron-hole system confined in microcrystals of semiconductors are studied theoretically with the spherical-dielectric continuum model. An extensive numerical calculation for the eigenvalue problem is carried out by Ritz’s variational technique. The motional state of the lowest level is classified into three regimes: the regime of exciton confinement for R/aB*≳4, the regime of individual particle confinement for R/aB*≲2, and the intermediate regime for 2≲R/aB*≲4, where R is the radius of the quantum well and aB* is the exciton Bohr radius. In the region R/aB*≳4, the high-energy shift of the lowest exciton state is described by the rigid-sphere model of the exciton quite well, which takes into account the spatial extension of the relative motion of the electron and the hole. The oscillator strength of the interband optical transition changes dramatically across the region 2≲R/aB*≲4. The metamorphosis of the absorption spectrum is shown as a function of R/aB* and compared with the experimental data.

  • Received 2 May 1988

DOI:https://doi.org/10.1103/PhysRevB.38.9797

©1988 American Physical Society

Authors & Affiliations

Yosuke Kayanuma

  • Department of Physics, Faculty of Science, Tohoku University, Sendai 980, Japan

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Issue

Vol. 38, Iss. 14 — 15 November 1988

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