Effect of gain nonlinearity in semiconductor lasers

Niels H. Jensen, P. L. Christiansen, and O. Skovgaard
Phys. Rev. B 38, 8219 – Published 15 October 1988
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Abstract

Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensional Fokker-Planck equation is derived and integrated on an Amdahl VP1100 vector processor. Above threshold the resulting probability density agrees with the rate-equation predictions. The case of high-speed modulation is also considered. The nonlinear gain is found to stabilize the laser.

  • Received 9 February 1988

DOI:https://doi.org/10.1103/PhysRevB.38.8219

©1988 American Physical Society

Authors & Affiliations

Niels H. Jensen, P. L. Christiansen, and O. Skovgaard

  • Laboratory of Applied Mathematical Physics, The Technical University of Denmark, DK-2800 Lyngby, Denmark

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Issue

Vol. 38, Iss. 12 — 15 October 1988

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