Positron-trapping mechanism at dislocations in Zn

Carlos Hidalgo, Soren Linderoth, and Nieves de Diego
Phys. Rev. B 36, 6740 – Published 1 November 1987
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Abstract

The evolution of the positron-lifetime parameters with the measuring temperature has been studied in deformed Zn in the temperature range 12210 K. For two samples with different degrees of deformation the presence of a component with a lifetime close to that in a monovacancy is observed. Both the average lifetime and the intensity of the long component decrease with increasing temperature. The experimental results are very well described in terms of a generalized trapping model where it is assumed that positrons become trapped in deep traps (jogs) via shallow traps (dislocation lines). The temperature dependence of the positron-lifetime spectra below 120 K is attributed to the temperature dependence of the trapping rate to the dislocation line. The experimental results have demonstrated that detrapping processes from the dislocation line take place above 120 K. The positron binding energy to the dislocation line has been shown to be 40±20 meV.

  • Received 24 June 1987

DOI:https://doi.org/10.1103/PhysRevB.36.6740

©1987 American Physical Society

Authors & Affiliations

Carlos Hidalgo and Soren Linderoth

  • Laboratory of Applied Physics II, Technical University of Denmark, DK-2800 Lyngby, Denmark

Nieves de Diego

  • Departamento de Fisica de la Materia Condensada, Facultad de Ciencias Fisicas, Universidad Complutense, E-28040 Madrid, Spain

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Issue

Vol. 36, Iss. 13 — 1 November 1987

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