Absorption spectroscopy on Ga0.47In0.53As/Al0.48In0.52As multi-quantum-well heterostructures. II. Subband structure

W. Stolz, J. C. Maan, M. Altarelli, L. Tapfer, and K. Ploog
Phys. Rev. B 36, 4310 – Published 15 September 1987
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Abstract

The subband structure of Ga0.47In0.53As/Al0.48In0.52As multi-quantum-well heterostructures (MQWH’s) lattice matched to InP, grown by molecular-beam epitaxy, was determined by absorption and magnetoabsorption experiments for well widths ranging from 2.3 to 13.8 nm. A comparison to theoretical models (parabolic single-band and coupled six-band envelope-function approximations) reveals the necessity of taking the nonparabolicity of the conduction band as well as of all the valence subbands into account. The equal values for the reduced effective mass and the electron effective mass, obtained by Shubnikovde Haas and cyclotron-resonance experiments, show that the highest valence-subband mass is much larger than the theoretical assumption from decoupled valence subbands. In view of the complete subband structure the best theoretical description is given by using a conduction-band offset ΔEc=500 meV as determined by capacitance-voltage measurements in the literature. For this value the calculated subband transition energies are about 10% higher than the experimental results.

  • Received 9 February 1987

DOI:https://doi.org/10.1103/PhysRevB.36.4310

©1987 American Physical Society

Authors & Affiliations

W. Stolz

  • Max-Planck-Institut fr Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of Germany

J. C. Maan and M. Altarelli

  • Hochfeld-Magnetlabor des Max-Planck-Instituts fr Festkörperforschung, 166X, F-38042 Grenoble Cedex, France

L. Tapfer and K. Ploog

  • Max-Planck-Institut fr Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of Germany

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Vol. 36, Iss. 8 — 15 September 1987

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