Abstract
Carrier cooling, as observed by time-resolved photoluminescence, is completely different for undoped and -type modulation-doped As/As multiple-quantum-well structures. Fast cooling by carrier-LO-phonon scattering is observed for the undoped quantum wells at low excitation and is well described using the theoretical three-dimensional carrier-LO-phonon scattering time. Cooling in the -type modulation-doped sample, however, is reduced by a factor of 35 for the same excitation densities. Our comparative study shows that the reduced energy-loss rate is not caused by the reduced dimensionality of the carrier system, but is an effect of the high electron density.
- Received 29 April 1987
DOI:https://doi.org/10.1103/PhysRevB.36.2954
©1987 American Physical Society