Interface roughening and domain growth in the dilute Ising model

We have studied domain growth in the two-dimensional dilute Ising model following an instantaneous quench from a very high temperature to a temperature below the critical point. We have carried out Monte Carlo simulations of system sizes up to ${600}^2$ out to a maximum of 20 000 Monte Carlo steps per spin. We have interpreted the crossover from the curvature-driven regime to a new growth regime in the light of a phenomenological theory that describes the impurity roughening of the interface between the two phases.