Temperature dependence of planar channeling radiation

H. Park; J. O. Kephart; R. K. Klein; R. H. Pantell; M. V. Hynes; B. L. Berman; B. A. Dahling; S. Datz; R. L. Swent; M. J. Alguard

doi:10.1103/PhysRevB.35.13

Temperature dependence of planar channeling radiation

H. Park, J. O. Kephart, R. K. Klein, R. H. Pantell, M. V. Hynes, B. L. Berman, B. A. Dahling, S. Datz, R. L. Swent, and M. J. Alguard

Phys. Rev. B 35, 13 – Published 1 January 1987

Abstract

Peak energies and linewidths of 54-MeV electron planar channeling radiation from a silicon crystal have been measured as a function of temperature. Our measured peak energies are compared with our theoretical calculations to obtain a Debye temperature for silicon of 495±10 K. This value is appreciably lower than the value of 543 K obtained from an x-ray diffraction measurement, but is in excellent agreement with the value of 500 K obtained recently from a measurement of axial channeling radiation.

Received 2 December 1985

DOI:https://doi.org/10.1103/PhysRevB.35.13

Authors & Affiliations

H. Park, J. O. Kephart, R. K. Klein, and R. H. Pantell

Department of Electrical Engineering, Stanford University, Stanford, California 94305

M. V. Hynes

Los Alamos National Laboratory, University of California, Los Alamos, New Mexico 87545

B. L. Berman

Department of Physics, The George Washington University, Washington, D.C. 20052 and Lawrence Livermore National Laboratory, University of California, Livermore, California 94550

B. A. Dahling