Theory of deep impurities in silicon-germanium alloys

Kathie E. Newman and John D. Dow
Phys. Rev. B 30, 1929 – Published 15 August 1984
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Abstract

Calculations of the deep-energy levels of substitutional sp3-bonded defects in Six Ge1x alloys suggest that the standard shallow dopants As and P and isoelectronic C defect may become deep traps for x0.2.

  • Received 14 June 1982

DOI:https://doi.org/10.1103/PhysRevB.30.1929

©1984 American Physical Society

Authors & Affiliations

Kathie E. Newman and John D. Dow

  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556

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Issue

Vol. 30, Iss. 4 — 15 August 1984

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