Carrier Repopulation from Infrared Faraday Rotation under Hot-Carrier Conditions

D. Mukhopadhyay and B. R. Nag
Phys. Rev. B 3, 360 – Published 15 January 1971
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Abstract

The magnitude of the Faraday rotation in Ge and Si under hot-electron conditions has been estimated for different orientations of the magnetic and the hot-electron dc field. The possibility of the evaluation of carrier repopulation from the analysis of Faraday-rotation data is discussed. The conditions required for a successful experiment for the application of the method are examined. It is found that the experiment is possible at room temperature, but the conditions are more favorable at liquid-nitrogen or lower temperatures.

  • Received 29 June 1970

DOI:https://doi.org/10.1103/PhysRevB.3.360

©1971 American Physical Society

Authors & Affiliations

D. Mukhopadhyay* and B. R. Nag

  • Institute of Radio Physics and Electronics, Calcutta-9, India

  • *Present address: Department of Electronics and Telecommunication Engineering, Jadavpur University, Calcutta-32, India.

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Issue

Vol. 3, Iss. 2 — 15 January 1971

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