Scaling of the Hamiltonian and momentum in semiconductors

L. Brey, C. Tejedor, and J. A. Vergés
Phys. Rev. B 29, 6840 – Published 15 June 1984
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Abstract

We compute self-consistently the matrix elements of the Hamiltonian H and the momentum p in a localized basis for covalent semiconductors. This basis is connected with the Wannier functions of the system obtained by means of a variational method. The calculation has been performed for different lattice constants in order to look for a dα dependence law for H and p. The results are more satisfactory in Si, where H roughly scales as d2. The scaling of the Cartesian components of p is rather more complicated, but a simple behavior is obtained for the modulus |p|.

  • Received 19 December 1983

DOI:https://doi.org/10.1103/PhysRevB.29.6840

©1984 American Physical Society

Authors & Affiliations

L. Brey, C. Tejedor, and J. A. Vergés

  • Departamento de Física del Estado Sólido, Universidad Autónoma, Cantoblanco, Madrid 34, Spain

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Issue

Vol. 29, Iss. 12 — 15 June 1984

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