Electron-hole plasma in direct-gap Ga1xAlx As and k-selection rule

M. Capizzi, S. Modesti, A. Frova, J. L. Staehli, M. Guzzi, and R. A. Logan
Phys. Rev. B 29, 2028 – Published 15 February 1984
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Abstract

Uniformly excited electron-hole plasma under three-dimensional confinement has been studied in Ga1xAlx As by photoluminescence at 2 K. With this approach, a satisfactory fitting of the experimental data has been obtained over a wide range of densities and Al concentrations using a single value of density and temperature throughout the excited region. The theoretical model used is based on the preservation of k-selection rules with a built-in broadening in the single-particle density of states. The fitting renormalized gap closely agrees with existing many-body theories, contrary to recent claims. The possibilities of plasmon-replica contributions and of thermalization processes by recent claims. The possibilities of plasmon-replica contributions and of thermalization processes by impurity or disorder-activated scattering are discussed. A new estimate of the radiative-recombination coefficient is reported.

  • Received 6 June 1983

DOI:https://doi.org/10.1103/PhysRevB.29.2028

©1984 American Physical Society

Authors & Affiliations

M. Capizzi, S. Modesti, and A. Frova

  • Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza," Piazzale Aldo Moro 2, I-00185 Roma, Italy

J. L. Staehli

  • Institute de Physique Appliquée, Ecole Polytechnique Fédérale, PH-Ecublens, CH-1015 Lausanne, Switzerland

M. Guzzi

  • Dipartimento di Fisica, Università degli Studi di Milano, I-20133 Milan, Italy

R. A. Logan

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 29, Iss. 4 — 15 February 1984

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