Electron band structure, resistivity, and the electron-phonon interaction for niobium under pressure

J. Neve, B. Sundqvist, and Ö. Rapp
Phys. Rev. B 28, 629 – Published 15 July 1983
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Abstract

Accurate measurements of the electrical resistance of Nb are presented as a function of temperature and pressure in the region 0-40°C and 0-1 GPa. From these measurements and published results for the compressibility and the pressure dependence of the superconducting transition temperature Tc we evaluate the pressure dependence of the electron-gas plasma frequency ω(p). The electronic structure of Nb is calculated from a self-consistent linear muffin-tin orbital method and results are obtained for the pressure dependence of the density of states at the Fermi surface, the root mean square over the Fermi surface of the Fermi velocity, the optical mass, and the plasma frequency. The experimental and calculated results for the pressure dependence of ω(p) are both close to dlnω2dlnV=1.9. This agreement suggests that measurements of the electrical resistance as a function of temperature and pressure provide a new test of band-structure calculations. From our measurements of the resistance and calculations of ω(p) and from published results for the compressibility we obtain the pressure dependence of the electron-phonon interaction λ(p). With p given in gigapascals, the result is dlnλdp=0.0047.

  • Received 2 March 1983

DOI:https://doi.org/10.1103/PhysRevB.28.629

©1983 American Physical Society

Authors & Affiliations

J. Neve

  • Department of Theoretical Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden

B. Sundqvist

  • Department of Physics, Umeå University, S-901 87 Umeå, Sweden

Ö. Rapp

  • Department of Solid State Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden

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Vol. 28, Iss. 2 — 15 July 1983

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