Low-field electron mobility and thermoelectric power in ${\mathrm{In}}_{1-x}{\mathrm{Ga}}_x{\mathrm{As}}_y{\mathrm{P}}_{1-y}$ lattice-matched to InP

Electron drift and Hall mobility, and thermoelectric power in ${\mathrm{In}}_{1-x}{\mathrm{Ga}}_x{\mathrm{As}}_y{\mathrm{P}}_{1-y}$, lattice-matched to InP, are calculated for different temperatures and compositions. The two-mode nature of the polar optic phonons is considered jointly with deformation-potential acoustic, piezoelectric, alloy, ionized-impurity, and electron-electron scattering. Band nonparabolicity, admixture of $p$ functions, arbitrary degeneracy of the electron distribution, and the screening effects of free carriers on the scattering probabilities are incorporated. The Boltzmann equation is solved by an iterative method using the currently established values of the material parameters. The agreement with the available experimental data is found to be satisfactory.