Defect states in doped and compensated a-Si: H

R. A. Street, D. K. Biegelsen, and J. C. Knights
Phys. Rev. B 24, 969 – Published 15 July 1981
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Abstract

Luminescence, electron spin resonance (ESR), optical absorption, conductivity, and composition data are measured on doped and compensated hydrogenated amorphous silicon. In material singly doped with boron or phosphorus, a variety of experiments indicates the introduction of a large defect density (up to 1018 cm3) of the dangling-bond type. Compensation increases the luminescence efficiency, but the luminescence peak shifts strongly to lower energy. Compensation reduces the ESR resonance at g=2.0055, but a broad resonance characteristic of a hole trap remains. We deduce that compensation reduces the dangling-bond density, but introduces a new band of localized states above the valence-band edge. We associate these new states with boron-phosphorus complexes whose origin is a chemical interaction occurring during deposition. Changes in the dangling-bond density with doping and compensation lead us to propose an autocompensation mechanism of defect formation. Also reported is the first observation of a metastable light-induced ESR signal in a-Si: H.

  • Received 24 November 1980

DOI:https://doi.org/10.1103/PhysRevB.24.969

©1981 American Physical Society

Authors & Affiliations

R. A. Street, D. K. Biegelsen, and J. C. Knights

  • Xerox Palo Alto Research Center, Palo Alto, California 94304

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Issue

Vol. 24, Iss. 2 — 15 July 1981

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