Pressure dependence of the electron-phonon interaction and the normal-state resistivity

Ö. Rapp and B. Sundqvist
Phys. Rev. B 24, 144 – Published 1 July 1981
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Abstract

Accurate measurements of the electrical resistance as a function of temperature and pressure are reported for Sn, Zr, dhcp La, and V. These measurements cover a temperature region around room temperature and pressures up to 1.3 GPa. From these data, including also our previous measurements for Al and published results for Pb, the pressure dependence of dρdT (the resistivity-temperature derivative) is obtained. This quantity is found to be a significant factor in the pressure dependence of the electron-phonon interaction parameter λ. For the nontransition metals the relative pressure dependence of dρdT is much larger than the compressibility. Therefore the pressure dependence of the superconducting Tc is quantitatively well accounted for by the resistance data for these metals. For the transition metals the pressure dependence of dρdT is relatively smaller and Tc(p) calculated from the resistance data is, at the best, only qualitatively correct. These differences are discussed. Estimates for the pressure dependence of the plasma frequency are obtained.

  • Received 23 December 1980

DOI:https://doi.org/10.1103/PhysRevB.24.144

©1981 American Physical Society

Authors & Affiliations

Ö. Rapp

  • Department of Solid State Physics, Royal Institute of Technology, S-100 44 Stockholm 70, Sweden

B. Sundqvist

  • Department of Physics, Umeå University, S-901 87 Umeå, Sweden

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Vol. 24, Iss. 1 — 1 July 1981

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