Abstract
The Hall coefficient has been measured between 2 and 300 K for small crystals of Sm in which the resistivity at 4 K is nearly times greater than its 300-K value of 290 μΩ cm. Significant differences from previous results reported for samples with a much smaller low-temperature resistivity rise have been found. It is shown that the size of the resistivity increase precludes its being ascribed to a scattering mechanism for a metallic number of carriers, and that the size of implies numbers of holes and electrons less than ∼5 × / at 4 K. The origin of the low-temperature residual conductivity is discussed.
- Received 26 July 1979
DOI:https://doi.org/10.1103/PhysRevB.20.4807
©1979 American Physical Society