Lattice dynamics of Ge and Si using the Born-von Karman model

A. D. Zdetsis and C. S. Wang
Phys. Rev. B 19, 2999 – Published 15 March 1979
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Abstract

The Born-von Karman model of lattice dynamics of diamond structure has been extended to include up to 12th-neighbor interactions. Applications to Ge and Si using eighth-neighbor interactions have been carried out. We obtained very good fits to the experimental values of phonon dispersion curves and elastic constants. However, in agreement with the conclusions of Herman, a reasonable fit can only be obtained using at least up to fifth-neighbor interactions. The special significance of the fifth neighbor is attributed to its structure. With the fitted force constants, we have calculated the phonon density of states using the high-resolution Gilat-Raubenheimer method. The calculated Debye temperatures and specific heats compare well with the experimental values.

  • Received 31 May 1977

DOI:https://doi.org/10.1103/PhysRevB.19.2999

©1979 American Physical Society

Authors & Affiliations

A. D. Zdetsis* and C. S. Wang

  • Bartol Research Foundation of The Franklin Institute, University of Delaware, Newark, Delaware 19711

  • *Present address: Nuclear Research Center Demokritos, Aghia Paraskevi Attikis, Athens, Greece.

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Vol. 19, Iss. 6 — 15 March 1979

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