Abstract
The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature of the Sn films. The temperature dependence of the conductance is determined from the resonant response at the junction plasma frequency as the temperature is decreased from . We used three different schemes for observation of the plasma oscillations: (a) second-harmonic generation (excitation at ∼ 4.5 GHz, GHz); (b) mixing (excitations at ∼ 9 and ∼ 18 GHz, GHz); (c) parametric half-harmonic oscillation (excitation at ∼ 18 GHz, GHz). Measurements were possible in two temperature intervals, and , with the result that as the temperature was decreased, the amplitude first increased from about zero to positive values and then at lower temperatures decreased approaching - 1 at the lowest temperatures of the experiment.
- Received 31 October 1977
DOI:https://doi.org/10.1103/PhysRevB.18.3220
©1978 American Physical Society