Mean-value point and dielectric properties of semiconductors and insulators

A. Baldereschi and E. Tosatti
Phys. Rev. B 17, 4710 – Published 15 June 1978
PDFExport Citation

Abstract

The mean-value-point technique for Brillouin-zone averages is shown to be applicable to the calculation of electronic dielectric screening matrices. The dielectric-matrix elements for which the technique is not accurate are only a few and for them a separate simple prescription is given. Detailed results are presented for the ω=0, q=0, and q0 ε matrices of diamond, Si, Ge, αSn, MgO, and NaCl. Comparison with a nearly-free-electron model is also discussed.

  • Received 31 October 1977

DOI:https://doi.org/10.1103/PhysRevB.17.4710

©1978 American Physical Society

Authors & Affiliations

A. Baldereschi

  • Laboratoire de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, Switzerland

E. Tosatti

  • Istituto di Fisica and Gruppo Nazionale di Struttura della Materia-Consiglio Nazionale delle Ricerche, Università di Roma, Italy
  • Department of Applied Physics, Stanford University, Stanford, California 94305

References (Subscription Required)

Click to Expand
Issue

Vol. 17, Iss. 12 — 15 June 1978

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×