Multiple-trapping model of anomalous transit-time dispersion in aSe

J. Noolandi
Phys. Rev. B 16, 4466 – Published 15 November 1977
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Abstract

A generalized model of multiple trapping from a band of extended or localized states is used to study timedependent charge transport in amorphous solids. The model differs from a conventional multiple-trapping model by including a distribution of trap release rates for a constant trap energy. An extensive analysis of transient photocurrent experiments on aSe is carried out to determine the transport parameters for this case. It is found that a small number of parameters can be used to analyze the experimental results over a wide range of temperature and sample thickness. The results of the analysis are interpreted in terms of trapcontrolled hopping, which is a special case of the generalized multiple-trapping model. The asymptotic value of the theoretical photocurrent transient is obtained for the multiple-trapping model, and the results of Scher and Montroll are recovered for the case of extreme or anomalous dispersion, which occurs for aSe at low temperature (T140 K). The density of trapping sites is estimated, and the difficulties associated with considering a continuous distribution of trap release rates are discussed. It is concluded that the generalized multiple-trapping model, defined by simple first-order rate equations, is capable of describing detailed shapes of photocurrent transients, including dispersive and nondispersive charge transport.

  • Received 17 December 1976

DOI:https://doi.org/10.1103/PhysRevB.16.4466

©1977 American Physical Society

Authors & Affiliations

J. Noolandi

  • Xerox Research Center of Canada, 2480 Dunwin Drive, Mississauga, Ontario L5L 1J9, Canada

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Vol. 16, Iss. 10 — 15 November 1977

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