Surface-structure determination of the layered compounds MoS2 and NbSe2 by low-energy electron diffraction

B. J. Mrstik, R. Kaplan, T. L. Reinecke, M. Van Hove, and S. Y. Tong
Phys. Rev. B 15, 897 – Published 15 January 1977
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Abstract

The stacking sequence and interplane and interlayer separation of 2HMoS2 and 2HNbSe2 are determined by the dynamical low-energy-electron diffraction approach. Although lateral reconstructions corresponding to alteration in the bulk stacking sequence at the surface are physically reasonable, we find that such reconstructions do not in fact occur for these two compounds.

  • Received 6 October 1975

DOI:https://doi.org/10.1103/PhysRevB.15.897

©1977 American Physical Society

Authors & Affiliations

B. J. Mrstik, R. Kaplan, and T. L. Reinecke*

  • Naval Research Laboratory, Washington, D. C. 20375

M. Van Hove and S. Y. Tong

  • Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53201

  • *Supported by National Academy of Science.
  • Supported in part by the NSF Grant No. GH-40626.

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Vol. 15, Iss. 2 — 15 January 1977

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