Abstract
An empirical nonlocal pseudopotential scheme is employed to calculate the electronic structure of eleven semiconductors: Si, Ge, , GaP, GaAs, GaSb, InP, InAs, InSb, ZnSe, and CdTe. Band structures, reflectivity spectra, electronic densities of states, and valence charge densities are presented and compared to experimental results. Improved optical gaps, optical critical-point topologies, valence-band widths, and valence charge distributions are obtained as compared to previous local pseudopotential results.
- Received 23 February 1976
DOI:https://doi.org/10.1103/PhysRevB.14.556
©1976 American Physical Society