Deterministic spin-orbit torque switching including the interplay between spin polarization and kagome plane in Mn3Sn

Zhengde Xu, Xue Zhang, Yixiao Qiao, Gengchiau Liang, Shuyuan Shi, and Zhifeng Zhu
Phys. Rev. B 109, 134433 – Published 23 April 2024

Abstract

Previous research has demonstrated the spin-orbit torque (SOT) switching of Mn3Sn in configuration I, where the spin polarization σ resides within the kagome plane. However, this configuration has yielded several unexpected outcomes, giving rise to debates concerning the fundamental physics governing the switching process. Alternatively, in configuration II, σ is perpendicular to the kagome plane, which bears greater resemblance to the ferromagnetic system. In this study, we show successful SOT switching of Mn3Sn in configuration II, demonstrating behaviors more akin to ferromagnets, e.g., the critical switching current density (Jcrit) and external field (Hext) are in the order of 1010A/m2 and tens of Oersted, respectively. The switching result is also independent of the initial state. We further show that the distinctive spin structure of Mn3Sn leads to unique switching characteristics, including Jcrit increasing linearly with Hext and the opposite switching polarity to ferromagnetism. A switching phase diagram is further provided as a guideline for experimental demonstrations, offering a clear physical picture for the observed phenomena.

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  • Received 29 August 2023
  • Revised 11 March 2024
  • Accepted 4 April 2024

DOI:https://doi.org/10.1103/PhysRevB.109.134433

©2024 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & Optical

Authors & Affiliations

Zhengde Xu1,2,3, Xue Zhang1,2,3, Yixiao Qiao1, Gengchiau Liang4,5, Shuyuan Shi6,*, and Zhifeng Zhu1,7,†

  • 1School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 2Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 3University of Chinese Academy of Sciences, Beijing 100049, China
  • 4Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
  • 5Industry Academia Innovation School, National Yang-Ming Chiao Tung University, Hsinchu City 300093, Taiwan
  • 6Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
  • 7Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai 201210, China

  • *Corresponding author: smeshis@buaa.edu.cn
  • Corresponding author: zhuzhf@shanghaitech.edu.cn

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Issue

Vol. 109, Iss. 13 — 1 April 2024

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