Abstract
The successful preparation of freestanding oxide perovskites down to the few-layer limit inspires the development of two-dimensional multifunctional materials exhibiting both ferroelectric and ferromagnetic properties. In this study, we performed a comprehensive first-principles investigation on the few-layer perovskite . Our findings reveal that its monolayer is an antiferromagnetic semiconductor, while other few layers are ferromagnetic half metals. All of them have an in-plane polarization with moderate energy barrier, although the “polarization” of metallic few layers may be not switchable. The distortion modes of few-layer are different from its orthorhombic bulk counterpart which is paraelectric. The symmetry mode analysis reveals that the monolayer displays proper ferroelectric behavior. We have investigated the polarization and magnetism of few-layer polar oxide perovskites and found that they strongly depend on the number of layers. These results will contribute to our current understanding of the properties of few-layer polar oxide perovskites.
- Received 13 June 2023
- Revised 4 December 2023
- Accepted 29 February 2024
DOI:https://doi.org/10.1103/PhysRevB.109.104430
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