Large spontaneous valley polarization and high magnetic transition temperature in stable two-dimensional ferrovalley YX2(X=I, Br, and Cl)

Bo Huang, Wen-Yu Liu, Xu-Cai Wu, Shu-Zong Li, Hongxing Li, Zhixiong Yang, and Wei-Bing Zhang
Phys. Rev. B 107, 045423 – Published 24 January 2023

Abstract

Ferrovalley materials with spontaneous valley polarization are crucial to valleytronic application. Based on first-principles calculations, we demonstrate that two-dimensional (2D) YX2(X=I, Br, and Cl) in a 2H structure constitutes a series of promising ferrovalley semiconductors with large spontaneous valley polarization and high magnetic transition temperature. Our calculations reveal that YX2 are dynamically, energetically, thermally and mechanically stable 2D ferromagnetic semiconductors with a magnetic transition temperature about 200 K. Due to the natural noncentrosymmetric structure, intrinsic ferromagnetic order and strong spin orbital coupling, the large spontaneous valley polarizations of 108.98, 57.70, and 22.35 meV are also predicted in single-layer YX2(X=I, Br, and Cl), respectively. The anomalous valley Hall effect is also proposed based on the valley contrasting Berry curvature. Moreover, the ferromagnetism and valley polarization are found to be effectively tuning by applying a biaxial strain. Interestingly, the suppressed valley physics of YBr2 and YCl2 can be switched on via applying a moderate compression strain. The present findings promise YX2 as competitive candidates for the further experimental studies and practical applications in valleytronics.

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  • Received 16 February 2022
  • Revised 9 October 2022
  • Accepted 9 January 2023

DOI:https://doi.org/10.1103/PhysRevB.107.045423

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Bo Huang*, Wen-Yu Liu*, Xu-Cai Wu, Shu-Zong Li, Hongxing Li, Zhixiong Yang, and Wei-Bing Zhang

  • Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha 410114, People's Republic of China

  • *These authors contributed equally to this work.
  • Corresponding author: zhangwb@csust.edu.cn

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Vol. 107, Iss. 4 — 15 January 2023

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