Observation of flat-band localization and topological edge states induced by effective strong interactions in electrical circuit networks

Xiaoqi Zhou, Weixuan Zhang, Houjun Sun, and Xiangdong Zhang
Phys. Rev. B 107, 035152 – Published 30 January 2023
PDFHTMLExport Citation

Abstract

Flat-band topologies and localizations in noninteracting systems are extensively studied in different quantum and classical-wave systems. Recently, the exploration on the novel physics of flat-band localizations and topologies in interacting systems has aroused great interest. In particular, it is theoretically shown that the strong interaction could drive the formation of nontrivial topological flat bands; even dispersive trivial bands dominate the single-particle counterparts. However, the experimental observation of those interesting phenomena is still lacking. Here, we experimentally simulate the interaction-induced flat-band localizations and topological edge states in electrical circuit networks. We directly map the eigenstates of two correlated bosons in one-dimensional Aharonov-Bohm cages to modes of two-dimensional circuit lattices. In this case, by tuning the effective interaction strength through circuits’ groundings, the two-boson flat bands and topological edge states are detected by measuring frequency-dependent impedance responses and voltage dynamics in the time domain. Our finding suggests a flexible platform to simulate the interaction-induced flat-band topology, and may possess potential applications in designing novel electronic devices.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 29 October 2022
  • Revised 26 December 2022
  • Accepted 19 January 2023

DOI:https://doi.org/10.1103/PhysRevB.107.035152

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Xiaoqi Zhou1,*, Weixuan Zhang1,*,†, Houjun Sun2, and Xiangdong Zhang1,‡

  • 1Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements of Ministry of Education, Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081 Beijing, China
  • 2Beijing Key Laboratory of Millimeter wave and Terahertz Techniques, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China

  • *These authors contributed equally to this work.
  • Corresponding author: zhangwx@bit.edu.cn
  • Corresponding author: zhangxd@bit.edu.cn

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 107, Iss. 3 — 15 January 2023

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×