Topological Hall effect driven by short-range magnetic order in EuZn2As2

Enkui Yi, Dong Feng Zheng, Feihao Pan, Hongxia Zhang, Bin Wang, Bowen Chen, Detong Wu, Huili Liang, Zeng Xia Mei, Hao Wu, Shengyuan A. Yang, Peng Cheng, Meng Wang, and Bing Shen
Phys. Rev. B 107, 035142 – Published 24 January 2023

Abstract

Short-range (SR) magnetic orders such as magnetic glass orders or fluctuations in a quantum system usually host exotic states or critical behaviors. Like the long-range (LR) magnetic orders, SR magnetic orders can also break time-reversal symmetry and drive the nonzero Berry curvature leading to novel transport properties. In this work, we report that in EuZn2As2 compound, besides the LR A-type antiferromagnetic (AF) order, the SR magnetic order is observed in a wide temperature region. Magnetization measurements and electron spin resonance (ESR) measurements reveal the ferromagnetic (FM) correlations for this SR magnetic order which results in an obvious anomalous Hall effect above the AF transition. Moreover the ESR results reveal that this FM SR order coexists with LR AF order exhibiting anisotropic magnetic correlations below the AF transition. The interactions of LR and SR magnetism evolving with temperature and field can host nonzero spin chirality and berry curvature leading to additional topological Hall contribution even in a centrosymmetric simple AF system. Our results indicate that EuZn2As2 is a fertile platform to investigate exotic magnetic and electronic states.

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  • Received 10 December 2022
  • Accepted 18 January 2023
  • Corrected 18 September 2023

DOI:https://doi.org/10.1103/PhysRevB.107.035142

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Corrections

18 September 2023

Correction: A grant number in the Acknowledgments contained an error and has been fixed.

Authors & Affiliations

Enkui Yi1,2, Dong Feng Zheng3, Feihao Pan4, Hongxia Zhang4, Bin Wang1,2, Bowen Chen1,2, Detong Wu1,2, Huili Liang3, Zeng Xia Mei3, Hao Wu3, Shengyuan A. Yang5, Peng Cheng4,*, Meng Wang1,†, and Bing Shen1,2,‡

  • 1Center for Neutron Science and Technology, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou, Guangdong 510275, China
  • 2State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, Guangdong 510275, China
  • 3Songshan Lake Materials Laboratory Dongguan, Guangdong 523808, China
  • 4Laboratory for Neutron Scattering and Beijing Key Laboratory of Optoelectronic Functional Materials and MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
  • 5Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore

  • *pcheng@ruc.edu.cn
  • wangmeng5@mail.sysu.edu.cn
  • shenbing@mail.sysu.edu.cn

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Issue

Vol. 107, Iss. 3 — 15 January 2023

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