Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films

Sachin Yadav, Vinay Kaushik, M. P. Saravanan, and Sangeeta Sahoo
Phys. Rev. B 107, 014511 – Published 27 January 2023
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Abstract

In two-dimensional (2D) disordered superconductors prior to superconducting (SC) transition, the appearance of a resistance peak in the temperature dependent resistance R(T) measurements indicates the presence of weak localization (WL) and electron-electron interaction (EEI) in the diffusion channel and SC fluctuations in the Cooper channel. Here, we demonstrate an interplay between SC fluctuations and EEI by low-temperature magnetotransport measurements for a set of 2D disordered TiN thin films. While cooling the sample, a characteristic temperature T* is obtained from the R(T) at which SC fluctuations start to appear. The upturn in R(T) above T* corresponds to WL and/or EEI. By the temperature and field dependences of the observed resistance, we show that the upturn in R(T) originates mainly from EEI with a negligible contribution from WL. Further, we have used the modified Larkin's electron-electron attraction strength β(T/Tc), containing a field-induced pair-breaking parameter, in the Maki-Thompson SC fluctuation term. Here, the temperature dependence of β(T/Tc) obtained from the magnetoresistance (MR) analysis shows a diverging behavior close to Tc, and it remains almost constant at higher temperature within the limit of ln(T/Tc)<1. Interestingly, the variation of β(T/Tc) on the reduced temperature (T/Tc) offers a common trend which has been closely followed by all the concerned samples presented in this paper. Finally, the temperature dependence of inverse phase scattering time (τϕ1), as obtained from the MR analysis, clearly shows two different regimes; the first one close to Tc follows the Ginzburg-Landau relaxation rate (τGL1), whereas the second one at high temperature varies almost linearly with temperature, indicating the dominance of inelastic electron-electron scattering for the dephasing mechanism. These two regimes are followed in a generic way by all the samples despite being grown under different growth conditions.

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  • Received 8 September 2022
  • Accepted 17 January 2023

DOI:https://doi.org/10.1103/PhysRevB.107.014511

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Sachin Yadav1,2, Vinay Kaushik3, M. P. Saravanan3, and Sangeeta Sahoo1,2,*

  • 1CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
  • 2Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
  • 3Low Temperature Laboratory, UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India

  • *sahoos@nplindia.org

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Issue

Vol. 107, Iss. 1 — 1 January 2023

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