Abstract
This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices postexposure were performed with transport temperatures between 300 and 1.5 K. Ambient conditions are applied to nontransport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements.
- Received 21 March 2022
- Revised 27 April 2022
- Accepted 12 May 2022
DOI:https://doi.org/10.1103/PhysRevB.105.205423
Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Published by the American Physical Society