Abstract
We present an atomistic theoretical study of the temperature dependence of the competition between Auger and radiative recombination in -plane (In,Ga)N/GaN quantum wells with indium (In) contents of 10%, 15%, and 25%. The model accounts for random alloy fluctuations and the connected fluctuations in strain and built-in field. Our investigations reveal that the total Auger recombination rate exhibits a weak temperature dependence; at a temperature of 300 K and a carrier density of , we find total Auger coefficients in the range of (10% In) to (25% In), thus large enough to significantly impact the efficiency in (In,Ga)N systems. Our calculations show that the hole-hole-electron Auger rate dominates the total rate for the three In contents studied; however, the relative difference between the hole-hole-electron and electron-electron-hole contributions decreases as the In content is increased to 25%. Our studies provide further insight into the origin of the “thermal droop” (i.e., the decrease in internal quantum efficiency with increasing temperature at a fixed carrier density) in (In,Ga)N-based light-emitting diodes. We find that the ratio of radiative to nonradiative (Auger) recombination increases in the temperature range relevant to the thermal droop ( K), suggesting that the competition between these processes is not driving this droop effect in -plane (In,Ga)N/GaN quantum wells. This finding is in line with recent experimental studies.
- Received 21 October 2021
- Revised 20 March 2022
- Accepted 25 April 2022
DOI:https://doi.org/10.1103/PhysRevB.105.195307
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