Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation

Caspar Hopfmann, Nand Lal Sharma, Weijie Nie, Robert Keil, Fei Ding, and Oliver G. Schmidt
Phys. Rev. B 104, 075301 – Published 5 August 2021
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Abstract

We present a comprehensive study on heralded spin preparation employing excited state resonances of droplet-etched GaAs quantum dots. This achievement will facilitate future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions, the properties of different quantum dot energy levels, i.e., shells, are revealed. The innovative use of polarization-resolved excitation and detection in the context of quasiresonant excitation spectroscopy of quantum dots greatly simplifies the determination of the spin preparation fidelities—irrespective of the relative orientations of laboratory and quantum dot polarization eigenbases. By employing this method, spin preparation fidelities of quantum dot ground states of up to 85% are found. Additionally, the characteristic nonradiative decay time is investigated as a function of ground state, excitation resonance, and excitation power level, yielding decay times as low as 29 ps for sp shell exited state transitions. Finally, by time-resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions and their apparent brightness.

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  • Received 30 November 2020
  • Revised 9 March 2021
  • Accepted 19 July 2021

DOI:https://doi.org/10.1103/PhysRevB.104.075301

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsQuantum Information, Science & TechnologyAtomic, Molecular & Optical

Authors & Affiliations

Caspar Hopfmann1,*, Nand Lal Sharma1, Weijie Nie1, Robert Keil1,†, Fei Ding2, and Oliver G. Schmidt1,3,4

  • 1Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
  • 2Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
  • 3Material Systems for Nanoelectronics, Technische Universität Chemnitz, 09107 Chemnitz, Germany
  • 4Nanophysics, Faculty of Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, TU Dresden, 01062 Dresden, Germany

  • *c.hopfmann@ifw-dresden.de
  • Present address: Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraße 72, 79108 Freiburg, Germany.

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Issue

Vol. 104, Iss. 7 — 15 August 2021

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