Hyperfine structure of transition metal defects in SiC

Benedikt Tissot and Guido Burkard
Phys. Rev. B 104, 064102 – Published 5 August 2021

Abstract

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in one of the telecom bands. We develop a theory for the interaction of an active electron in the D shell of a TM defect in SiC with the TM nuclear spin and derive the effective hyperfine tensor within the Kramers doublets formed by the spin-orbit coupling. Based on our theory we discuss the possibility to exchange the nuclear and electron states with potential applications for nuclear spin manipulation and long-lived nuclear-spin based-quantum memories.

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  • Received 16 April 2021
  • Accepted 22 July 2021

DOI:https://doi.org/10.1103/PhysRevB.104.064102

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsQuantum Information, Science & Technology

Authors & Affiliations

Benedikt Tissot* and Guido Burkard

  • Department of Physics, University of Konstanz, D-78457 Konstanz, Germany

  • *benedikt.tissot@uni-konstanz.de
  • guido.burkard@uni-konstanz.de

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Issue

Vol. 104, Iss. 6 — 1 August 2021

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