Lattice melting and superconductivity in a group IV-VI compound

Liu-Cheng Chen, Pei-Qi Chen, Wei-Jian Li, Qian Zhang, Viktor V. Struzhkin, Alexander F. Goncharov, Zhifeng Ren, and Xiao-Jia Chen
Phys. Rev. B 103, 214516 – Published 21 June 2021

Abstract

Inspired by the rich physical properties of IV-VI compounds, we choose polycrystalline Pb0.99Cr0.01Se to investigate its structural, vibrational, and electrical transport properties under pressure up to 50 GPa. The structural transitions from the B1 to Pnma phase and then to the B2 phase in this sample are verified by the x-ray diffraction and Raman scattering measurements. The formation of the intermediate phase is suggested to be mediated by Peierls distortion, and the broad hump in the temperature-dependent resistivity in the intermediate phase gives further evidence of this phenomenon. When the material evolves into the B2 phase, superconductivity is observed to emerge, accompanied by suppressing the broad hump of resistivity at intermediate temperatures. Meanwhile, Hall coefficient measurements indicate that the carrier type changes during the structural transitions. These results suggest that the superconductivity in the B2 phase for this material is originated by “melting” the Peierls lattice distortion. By extending the present findings to other similar IV-VI semiconductors, we propose that all group IV-VI compounds could exhibit superconductivity in their B2 phase due to the lattice melting at high pressures.

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  • Received 24 January 2021
  • Revised 27 May 2021
  • Accepted 14 June 2021

DOI:https://doi.org/10.1103/PhysRevB.103.214516

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Liu-Cheng Chen1,2, Pei-Qi Chen3, Wei-Jian Li2, Qian Zhang4,5, Viktor V. Struzhkin2, Alexander F. Goncharov6, Zhifeng Ren5, and Xiao-Jia Chen1,2,*

  • 1School of Science, Harbin Institute of Technology, Shenzhen 518055, China
  • 2Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
  • 3Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 4Department of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China
  • 5Department of Physics and TcSUH, University of Houston, Texas 77204, USA
  • 6Earth and Planets Laboratory, Carnegie Institution of Washington, Washington, DC 20015, USA

  • *xjchen@hit.edu.cn; xjchen@hpstar.ac.cn

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Issue

Vol. 103, Iss. 21 — 1 June 2021

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