Defect formation in a graphene overlayer on ruthenium under high pressure

Michele Pisarra, Cristina Díaz, and Fernando Martín
Phys. Rev. B 102, 075406 – Published 4 August 2020

Abstract

Due to its highly corrugated moiré structure and the nanometer modulation of its electronic properties, graphene deposited on ruthenium substrates (G-Ru for short) is a versatile playground for molecular deposition and chemical reactivity. Under local ultrahigh pressure conditions, one can expect an even richer behavior, reinforced by the likely appearance of defects. We have theoretically investigated the formation of such defects on G-Ru by using density functional theory methods. We show that defects can be produced in the high areas of the moiré, either by generating reactive centers in graphene through the creation of vacancies or by modifying the relative carbon-ruthenium positions through conformational changes. The energetic cost to induce these defects is rather small, of the order of a few eV, so that defects are expected to appear when impacting a STM tip or applying high pressure by a diamond AFM tip in these regions. The different types of defects can be clearly distinguished from each other in our simulated STM images.

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  • Received 11 May 2020
  • Revised 15 July 2020
  • Accepted 15 July 2020

DOI:https://doi.org/10.1103/PhysRevB.102.075406

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Michele Pisarra1,2,*, Cristina Díaz2,3,4,†, and Fernando Martín1,2,3

  • 1Instituto IMDEA Nanociencia, Calle Faraday 9, 28049 Madrid, Spain
  • 2Departamento de Química, Módulo 13, Universidad Autónoma de Madrid, 28049 Madrid, Spain
  • 3Condensed Matter Physics Center (IFIMAC), Cantoblanco, 28049 Madrid, Spain
  • 4Institute for Advanced Research in Chemistry (IAdChem), Universidad Autónoma de Madrid, 28049 Madrid, Spain

  • *michele.pisarra@imdea.org
  • Present address: Departamento de Química Física, Facultad de CC. Químicas, Universidad Complutense de Madrid, 28040 Madrid, Spain.

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Vol. 102, Iss. 7 — 15 August 2020

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