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Quantum spin Hall effect in monolayer and bilayer TaIrTe4

Peng-Jie Guo, Xiao-Qin Lu, Wei Ji, Kai Liu, and Zhong-Yi Lu
Phys. Rev. B 102, 041109(R) – Published 8 July 2020

Abstract

Generally, stacking two quantum spin Hall insulators gives rise to a trivial insulator. Here, based on first-principles electronic structure calculations, we confirm that monolayer TaIrTe4 is a quantum spin Hall insulator and remarkably find that bilayer TaIrTe4 is still a quantum spin Hall insulator. Theoretical analysis indicates that the covalentlike interlayer interaction in combination with the small band gap at the time-reversal invariant Γ point results in new band inversion in bilayer TaIrTe4, namely, the emergence of quantum spin Hall phase. Meanwhile, a topological phase transition can be observed by increasing the interlayer distance in bilayer TaIrTe4. Considering that bulk TaIrTe4 is a type-II Weyl semimetal, layered TaIrTe4 thus provides an ideal platform to realize different topological phases at different dimensions.

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  • Received 5 November 2019
  • Revised 22 May 2020
  • Accepted 25 June 2020

DOI:https://doi.org/10.1103/PhysRevB.102.041109

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Peng-Jie Guo, Xiao-Qin Lu, Wei Ji, Kai Liu*, and Zhong-Yi Lu

  • Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China

  • *kliu@ruc.edu.cn
  • zlu@ruc.edu.cn

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Issue

Vol. 102, Iss. 4 — 15 July 2020

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