• Rapid Communication

Atomic-scale origin of ultrahigh piezoelectricity in samarium-doped PMN-PT ceramics

Chunchun Li, Bin Xu, Dabin Lin, Shujun Zhang, Laurent Bellaiche, Thomas R. Shrout, and Fei Li
Phys. Rev. B 101, 140102(R) – Published 27 April 2020
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Abstract

Designing high-performance piezoelectric materials based on atomic-scale calculations is highly desired in recent years, following the understanding of the structure-property relationship of state-of-the-art piezoelectric materials. Previous mesoscale simulations showed that local structural heterogeneity plays an important role in the piezoelectric property of ferroelectrics; that is, larger structural heterogeneity leads to higher piezoelectricity. In this Rapid Communication, by combining first-principles calculations and experimental characterizations, we explored the atomic-scale origin of the high piezoelectricity for samarium-doped Pb(Mg1/3Nb2/3)O3PbTiO3 (PMN-PT) ceramics, which possesses the highest piezoelectric d33 of 1500pCN1 among all known piezoelectric ceramics. The impacts of various dopants on local structure and piezoelectric properties of PMN-PT ceramics were investigated in terms of the effective ionic radius and cation valence. Our results show that A-site dopants with a valence of 3+ are more effective to produce local structural heterogeneity in PMN-PT when compared with the A-site dopants with a valence of 2+, and a smaller dopant size leads to a larger variation of local structure. According to this study, the outstanding piezoelectricity in Sm-doped PMN-PT ceramics is attributed to the fact that Sm3+ is the smallest ions that can entirely go to the A site of PMN-PT rather than the B site. The present work may benefit the design of high-performance piezoelectric materials based on the concept of local structural engineering.

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  • Received 5 July 2019
  • Revised 31 March 2020
  • Accepted 1 April 2020

DOI:https://doi.org/10.1103/PhysRevB.101.140102

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Chunchun Li1,2, Bin Xu3,4,*, Dabin Lin2, Shujun Zhang5, Laurent Bellaiche4, Thomas R. Shrout2, and Fei Li2,6,†

  • 1College of Information Science and Engineering, Guilin University of Technology, Guilin 541004, China
  • 2Materials Research Institute, Pennsylvania State University, University Park, State College, Pennsylvania 168001, USA
  • 3School of Physical Science and Technology, Soochow University, Suzhou, Jiangsu 215006, China
  • 4Natural Science Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 5Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong New South Wales 2500, Australia
  • 6Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China

  • *Corresponding author: binxu19@suda.edu.cn
  • Corresponding author: ful5@xjtu.edu.cn

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Issue

Vol. 101, Iss. 14 — 1 April 2020

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