Abstract
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically doped topological insulators or intrinsic magnetic topological insulator by applying an external magnetic field. However, either the low observation temperature or the unexpected external magnetic field (tuning all layers to be ferromagnetic) still hinders further application of QAHE. Here, we theoretically demonstrate that proper stacking of and layers is able to produce intrinsically ferromagnetic van der Waals heterostructures to realize the high-temperature QAHE. We find that interlayer ferromagnetic transition can happen at when a five-quintuple-layer topological insulator is inserted into two septuple-layer with interlayer antiferromagnetic coupling. Band structure and topological property calculations show that heterostructure exhibits a topologically nontrivial band gap around 26 meV, that hosts a QAHE with a Chern number of . In addition, our proposed materials system should be considered as an ideal platform to explore high-temperature QAHE due to the fact of natural charge compensation, originating from the intrinsic -type defects in and -type defects in .
- Received 2 August 2019
- Revised 31 October 2019
DOI:https://doi.org/10.1103/PhysRevB.101.014423
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