Abstract
Magnetic insulating and exchange bias (EB) are two basic magnetic states with actual and potential applications in spintronic and magnonic devices. However, ferromagnetic insulators (FMIs) are rare, and it is even more challenging to obtain a FMI with large EB. In this paper, high performance of FMIs and EB in :NiO nanocomposite epitaxial thin films is reported. The antiferromagnetic NiO nanoparticles, randomly embedded in a ferromagnetic matrix, enhance the robustness of the insulating state and result in an EB field as large as 1100 Oe. The simultaneously enhanced resistivity and EB are attributed to localized oxygen vacancy, preserved strain state, and increased ferromagnetic-antiferromagnetic interface ratio. This paper provides not only a material candidate for spintronics but also a referential strategy to design artificial materials with multifunctionality.
- Received 27 September 2019
- Revised 23 December 2019
DOI:https://doi.org/10.1103/PhysRevB.101.014422
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