High-resolution resonant excitation of NV centers in 6HSiC: A matrix for quantum technology applications

Kh. Khazen, H. J. von Bardeleben, S. A. Zargaleh, J. L. Cantin, Mu Zhao, Weibo Gao, T. Biktagirov, and U. Gerstmann
Phys. Rev. B 100, 205202 – Published 11 November 2019

Abstract

Atomlike defect levels in silicon carbide (SiC) polytypes have been proposed and proven to be an excellent platform for various quantum technology applications. Single-photon emitters, coherent control at room temperature, and temperature and magnetic field sensing at the nanoscale have already been demonstrated for the case of vacancy and divacancy defects in SiC and more recently proposed for negatively charged NV centers. NV centers, which allow a better control of their generation, offer in addition a further shift of the spectral range in the near infrared, i.e., in the O- and S-band telecom range. We demonstrate here that the association of high resolution optical spectroscopy and electron paramagnetic resonance spectroscopy combined with first-principles calculations allow the identification of the microscopic structure of the six distinct NV centers in 6HSiC and the assignment of their associated zero-phonon photoluminescence lines. Time resolved photo-EPR measurements at T=4K show that NV centers in 6HSiC present spin lattice relaxation times of several seconds. These excellent qubit properties should enable their application and implementation in quantum information devices.

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  • Received 31 August 2019

DOI:https://doi.org/10.1103/PhysRevB.100.205202

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Kh. Khazen1,2, H. J. von Bardeleben1, S. A. Zargaleh3, J. L. Cantin1, Mu Zhao3, Weibo Gao3, T. Biktagirov4, and U. Gerstmann4

  • 1Sorbonne Université, Campus Pierre et Marie Curie, Institut des Nanosciences de Paris, 4, place Jussieu, 75005 Paris, France
  • 2Quantum Matter and Technology Laboratory, Department of Converging Technologies, PIAIS-Khatam University, Tehran, Iran
  • 3The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
  • 4Department of Physik, University of Paderborn, Warburger Strasse 100, 33098 Paderborn, Germany

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Vol. 100, Iss. 20 — 15 November 2019

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