4f conduction in the magnetic semiconductor NdN

W. F. Holmes-Hewett, R. G. Buckley, B. J. Ruck, F. Natali, and H. J. Trodahl
Phys. Rev. B 100, 195119 – Published 13 November 2019

Abstract

We report the growth of films of the intrinsic ferromagnetic semiconductor NdN and investigate their optical and transport properties. There is clear evidence of a strong anomalous Hall effect as expected from a 4f conduction channel, supported by an optical absorption into a 4f or 4f/5d hybridized tail at the base of the conduction band. The results reveal a heavy-fermion 4f/5d band lying where it can be occupied at controllable levels with nitrogen-vacancy donors.

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  • Received 11 September 2019
  • Revised 30 October 2019

DOI:https://doi.org/10.1103/PhysRevB.100.195119

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

W. F. Holmes-Hewett1, R. G. Buckley2, B. J. Ruck1, F. Natali1, and H. J. Trodahl1

  • 1The MacDiarmid Institute for Advanced Materials and Nanotechnology and The School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington 6140, New Zealand
  • 2The MacDiarmid Institute for Advanced Materials and Nanotechnology and Robinson Research Institute, Victoria University of Wellington, PO Box 600, Wellington 6140, New Zealand

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Issue

Vol. 100, Iss. 19 — 15 November 2019

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